S.S. Lau


Office: 3608 Engineering Building Unit 1

Mailing Address:
Department of Electrical and Computer Engineering
9500 Gilman Drive, Mail Code 0407
University of California, San Diego
La Jolla, CA 92093-0407

Email: lau@ece.ucsd.edu
Phone: (858) 534-3097
Fax: (858) 534-0556

Ph.D. University of California, Berkeley, 1969

Electronic Devices and Materials
Professor Lau joined the faculty at UC San Diego in 1980 after working at AT&T Bell Laboratories and Caltech. He was a pioneer in the silicidation process for Si technology and in the ion-mixing phenomenon. Since coming to UC San Diego, his research interest expanded into the area of III-V compound semiconductor systems. His investigation on the fundamental aspects of metal/Ill-V compound interactions has led to innovative fabrication techniques to form non-spiking contacts and to novel methods to induce compositional disordering in superlattice structures by means of solid state reactions.

Research Interests
Processing, characterization and applications of electronic materials, ion-solid interactions and thin film technology.

Current Research
Thin film technology, nitrides, heterogeneous intergration.

Honors and Distinctions
  • Fellow, American Physical Society
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  • Fullbright scholar
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  • Distinguished professor
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  • Honorary member, Golden Key International Honor Society
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  • Founding coordinating editor, Materials Science and Engineering Reports
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  • Editorial Board, Materials Chemistry and Physics
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  • Councilor, The Bohmische Physical Society
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    Selected Recent Publications

    		 Wayne Chen, Peng Chen, Yi Jing, S.S. Lau, "Double-flip transfer of Indium Phosphide layers via adhesive wafer bonding and ion-cutting process", Appl. Phys. Lett., 90, 052114 (2007)

    Justin Bickford, D, Quiao, Yu, P.K.L.; S. S. Lau, "Electrical characterization of GaAs metal bonded to Si", Appl. Phys. Lett., 89, 012106 pp. 3 (2006)

    P. Chen and P. K. Chu , T. Höchbauer, J.-K. Lee, and M. Nastasi , D. Buca and S. Mantl , R. Loo and M. Caymax I, T. Alford and J. W. Mayer , D. Theodore , M. Cai, B. Schmidt, and S. S. Lau "Investigation of plasma hydrogenation and trapping mechanism for layer transfer", Appl. Phys. Lett. 86, 31904-6, (2005).

    J. K. Lee and M. Nastasi, N. David Theodore and A. Smalley,T. L. Alford and J. W. Mayer. M. Cai and S. S. Lau , "Effects of hydrogen implantation temperature on ion-cut of silicon", Journal of Applied Physics, 96, 280 -288 (2004).

    L. S. Yu, L. Jia, D. Qiao, S. S. Lau, J. Li, J. Y. Lin, and H. X. Jiang, "The Origins of Leaky Characteristics of Schottky Diodes on p-GaN", IEEE Trans. Elect. Dev., 50 (2), 292-296 (2003).



    Xuejie Shi, K. Henttinen, T. Suni, I. Suni, S. S. Lau, and Man Wong, "Characterization of Low-Temperature Processed Single-Crystalline Silicon Thin-Film Transistor on Glass", IEEE Elect. Dev. Ltrs., 24 (9), 574-576 (2003).



    D. Qiao, L. S. Yu, L. Jia, P. M. Asbeck, S. S. Lau, and T. E. Haynes, "Transport Properties of the Advancing Interface Ohmic Contact to AlGaN/GaN Heterostructures", Appl. Phys. Lett., 80 (6), 992-994 (2002).



    D. Qiao, L. Jia, L. S. Yu, P. M. Asbeck, S. S. Lau, S.-H. Lim, Z. Liliental-Weber, T. E. Haynes, and J. Barner, "Ta-based Advancing Interface Ohmic Contacts to AlGaN/GaN Heterostructures", J. Appl. Phys. 89(10), 5543-6 (2001).



    K. Henttinen, I. Suni, and S.S. Lau, "Mechanically Induced Si Layer Transfer in Hydrogen Implanted Si Wafers", Appl. Phys. Lett. 76(17), 2370-2 (2000).


    Last Updated: 6/15/07