S.S. Lau


Office: 3608 Engineering Building Unit 1

Mailing Address:
Department of Electrical and Computer Engineering
9500 Gilman Drive, Mail Code 0407
University of California, San Diego
La Jolla, CA 92093-0407

Email: lau@ece.ucsd.edu
Phone: (858) 534-3097
Fax: (858) 534-0556

Ph.D. University of California, Berkeley, 1969

Electronic Devices and Materials
Professor Lau joined the faculty at UC San Diego in 1980 after working at AT&T Bell Laboratories and Caltech. He was a pioneer in the silicidation process for Si technology and in the ion-mixing phenomenon. Since coming to UC San Diego, his research interest expanded into the area of III-V compound semiconductor systems. His investigation on the fundamental aspects of metal/Ill-V compound interactions has led to innovative fabrication techniques to form non-spiking contacts and to novel methods to induce compositional disordering in superlattice structures by means of solid state reactions.

Research Interests
Processing, characterization and applications of electronic materials, ion-solid interactions and thin film technology.

Current Research
Thin film technology, nitrides, heterogeneous intergration.

Honors and Distinctions
  • Fellow, American Physical Society
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  • Fullbright scholar
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  • Distinguished professor
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  • Honorary member, Golden Key International Honor Society
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  • Founding coordinating editor, Materials Science and Engineering Reports
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  • Editorial Board, Materials Chemistry and Physics
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  • Councilor, The Bohmische Physical Society
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    Selected Recent Publications

    Peng Chen, Winnie V. Chen, Paul K. L. Yu, Chak Wah Tang, Kei May Lau, Luke Mawst, Charles Paulson, T. F. Kuech, and S. S. Lau, “Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon”, Appl. Phys. Lett. 94, 012101 (2009).

    Shadi A. Dayeh, Peng Chen, Yi Jing, Edward T. Yu, S. S. Lau, and Deli Wang
    “Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation”, Appl. Phys. Lett. 93, 203109 (2008).

    Wayne Chen, Peng Chen, J. E. Pulsifer, T. L. Alford,T. F. Kuech, and S. S. Lau," Integration of thin layers of single-crystalline InP with flexible substrates", Applied Physics Letters 92,212109 (2008).

    Wayne Chen, Peng Chen, Yi Jing, S.S. Lau, "Double-flip transfer of Indium Phosphide layers via adhesive wafer bonding and ion-cutting process", Appl. Phys. Lett., 90, 052114 (2007)

    Justin Bickford, D, Qiao, Yu, P.K.L.; S. S. Lau, "Electrical characterization of GaAs metal bonded to Si", Appl. Phys. Lett., 89, 012106 pp. 3 (2006)

    P. Chen and P. K. Chu , T. Höchbauer, J.-K. Lee, and M. Nastasi , D. Buca and S. Mantl , R. Loo and M. Caymax I, T. Alford and J. W. Mayer , D. Theodore , M. Cai, B. Schmidt, and S. S. Lau "Investigation of plasma hydrogenation and trapping mechanism for layer transfer", Appl. Phys. Lett. 86, 31904-6, (2005).

    J. K. Lee and M. Nastasi, N. David Theodore and A. Smalley,T. L. Alford and J. W. Mayer. M. Cai and S. S. Lau , "Effects of hydrogen implantation temperature on ion-cut of silicon", Journal of Applied Physics, 96, 280 -288 (2004).

    L. S. Yu, L. Jia, D. Qiao, S. S. Lau, J. Li, J. Y. Lin, and H. X. Jiang, "The Origins of Leaky Characteristics of Schottky Diodes on p-GaN", IEEE Trans. Elect. Dev., 50 (2), 292-296 (2003).

    D. Qiao, L. S. Yu, L. Jia, P. M. Asbeck, S. S. Lau, and T. E. Haynes, "Transport Properties of the Advancing Interface Ohmic Contact to AlGaN/GaN Heterostructures", Appl. Phys. Lett., 80 (6), 992-994 (2002).

    D. Qiao, L. Jia, L. S. Yu, P. M. Asbeck, S. S. Lau, S.-H. Lim, Z. Liliental-Weber, T. E. Haynes, and J. Barner, "Ta-based Advancing Interface Ohmic Contacts to AlGaN/GaN Heterostructures", J. Appl. Phys. 89(10), 5543-6 (2001).

    K. Henttinen, I. Suni, and S.S. Lau, "Mechanically Induced Si Layer Transfer in Hydrogen Implanted Si Wafers", Appl. Phys. Lett., 76(17), 2370-2 (2000).


    Last Updated: 04/08/09